GaN-on-Si Epiwafers

Translucent’s revolutionary GaN-on-Si technology employs a patented Rare Earth Oxide (REO) layer that electrically isolates the device layers from the substrate and also provides a physical barrier to stop silicon diffusion.

  • Insulating REO buffer isolates GaN from silicon
  • REO enables superior high voltage device performance at a competitive price




Ge-on-Si Epiwafers

Translucent’s germanium-on-silicon technology forms the foundation for our photonics materials and multi-junction solar cells for Concentrated Photovoltaic (CPV) applications.

  • Germanium directly on silicon
  • Tailored bandgap via Group IV alloys