Translucent's patented hardware and processes make high quality epitaxial layers on silicon and germainium stubstrates. Translucent's cyrstalline rare earth oxides are perfect for creating Gallium Nitride devices on large area silicon substrates. Translucent provides 6" and 8" silicon wafers for the RF, Power Transistor, and LED industries.
Translucent's unique Silicon Germanium Tin process creates excellent epitaxial layers for solar cell and infrared detector manufacurers. Translucent's technology allows manufacturers to tune the band gap for optimum sensitivity in each application.
The crystalline rare earth oxide (cREO™) epitaxially grown on silicon is a proven template for the MOCVD growth of III-N materials. Available in both 150mm and 200mm diameters the templates have been used for the grown of power GaN HEMT epiwafers. These templates provide an entry point for new adopters of power GaN supporting both AlN first MOCVD but also enabling GaN first growth processes not currently available for MOCVD growth on silicon. Since the template is grown independently of the III-N its properties can be designed to support the upstream MOCVD process – for example the buried oxide can take a portion of the vertical breakdown or can be used to offset some of the mechanical stresses imparted traditional GaN-on-silicon. Focused on serving the power GaN market this technology also has applicability to both RF GaN and GaN LEDs on silicon
Gallium Nitride based semiconductors are growing at astonishing rates. Transistors made with GaN are improving Radio Frequency devices from cell phones to radar systems. Power transistors using GaN can improve efficiency in power conversions devices from consumer style laptop power bricks through grid power applications. Translucent's substrates allow improved cost and performance for device manufacturers.
Translucent's light sensitive Silicon Germanium Tin devices are perfect for concentrating solar cells and new kinds of infrared detector arrays. Wavelength sensitivity can be tuned to optimise sensitivity for wavelengths not easily captured by traditional silicon and gallium arsenide devices.
Translucent Silicon Germanium Tin (SiGeSn) epitaxial layers are epitaxially grown on Ge wafers using low temperature, low pressure CVD. For photovolataics the use of this alloy provides a path to next generation four junction cells incorporating an epitaxial Ge junction and the all-important 1.0eV SiGeSn sub cell. Epitaxial layers of GeSn on Ge with Sn concentration >3% provide tunable absorption properties enable new types of IR detectors currently only served by expensive III-V semiconductors. For both applications this alloy system can be used for direct integration of the epilayers onto silicon substrates