Translucent supplies device-ready templates for epitaxial growth of nitrides and germanium on silicon-substrate wafers for the solid state lighting industry (LEDs), the power electronics industry (power FETs), and the solar concentrating photovoltaic (CPV) industry via high efficiency solar cells. In all of these industries there is a trend towards cost-effective economies of scale for devices, and most of Translucent’s “on-silicon” technologies can be supplied on 100, 150, or 200 mm silicon wafers.
Translucent supplies device-ready templates for epitaxial growth of nitrides and germanium on silicon-substrate wafers for the solid state lighting industry (LEDs), the power electronics industry (power FETs), and the solar concentrating photovoltaic (CPV) industry via high efficiency solar cells. In all of these industries there is a trend towards cost-effective economies of scale for devices, and most of Translucent’s “on-silicon” technologies can be supplied on 100, 150, or 200 mm silicon wafers.
Translucent has developed a range of products based on lattice-engineered, single-crystal rare-earth-oxide technology. These products provide our customers with a platform for low-cost epitaxial growth of novel materials structures on top of these layers, including those based on Gallium Nitride (GaN) and Germanium (Ge).
Translucent’s technology platform performs well for both GaN-on-Si as well as Ge-on-Si materials systems. The rare earth oxides that are used have been evaluated in a production, manufacturing environment. Translucent has spent the last decade generating IP in this area, and has many patents issued and pending.