Gallium Nitride on Silicon: vGaN™

Using cSOI™ as a baseline platform, Translucent can eptiaxially grow using lattice matching and pre-stressing techniques single crystal GaN-on-Si device ready templates. The virtual GaN templates have been trademarked as vGaN™ and are available upon enquiry. The vGaN™ technology encompasses both an oxide insulator and a III-N layer. For example, photoluminescence mapping of the GaN layer using a commercially available mapper operating at 266nm with a 100mm diameter wafer exhibited excellent PL uniformities. These device-ready template wafers are now in a position to be supplied to producers manufacturers of Gallium Nitride device structures (i.e. LED and FET manufacturers). Translucent is now enabling device manufacturers designers to use proprietary processes whilst accessing the manufacturing benefits of Translucent’s scalable cSOI™ technology platform with Gallium Nitride.

Current GaN-on-Si technology is very much focused on stress engineering. Successful approaches today use materials engineering to build in tensile stress at growing temperatures to compensate the compressive strain that develops on cooling. The Translucent rare earth oxide permits controlled, uniform and consistent stress engineering given the ability to blend different rare earth metal species in the single crystal oxide on the silicon substrate.

Translucent News

  • 16-Feb-12 This year's Prism Awards videos are live on the Prism Awards Website.
  • 15-Feb-12 Michael Lebby to speak at SVC's Executive Forum, 12:30pm, 1-May-12, Santa Clara Convention Center.
  • 26-Jan-12 Michael Lebby presented the award for Green Photonics at the Prism Awards Ceremony.
  • 03-Jan-12 Translucent is referenced in an article in the current issue of Semiconductor Today Magazine.
  • 20-Dec-11 Translucent's Michael Lebby gave an invited talk at Honet 2011.
  • 30-Nov-11 Article about Translucent's technology is published in Oct/Nov issue of Semiconductor Today.
  • 12-Oct-11 Translucent visits PIDA in Taiwan.