Power Electronics (Power FETs) using Translucent vGaN™ technology

In the power electronics industry, increasing consumer demand and rapidly developing technologies such as electric vehicles and solar power are requiring switches capable of handling 900V and above. Already companies are producing GaN-on-silicon devices capable of routinely handling 200-600V. As the operating voltage is increased, the thickness of GaN must also be increased, however such is the delicate balance of mechanical stresses within a GaN on silicon structure there is a limit to which this can be done before the wafer warps and the Gallium Nitride layer cracks. The value that a rare earth oxide cSOI™ structure brings to this technology is that for any given voltage, the presence of a rare earth oxide reduces the thickness of GaN required, thereby resetting the onset of mechanical failure to a voltage beyond what is needed for current and future applications. This is due the fact that the REO is a "high-k" dielectric.

Translucent News

  • 16-Feb-12 This year's Prism Awards videos are live on the Prism Awards Website.
  • 15-Feb-12 Michael Lebby to speak at SVC's Executive Forum, 12:30pm, 1-May-12, Santa Clara Convention Center.
  • 26-Jan-12 Michael Lebby presented the award for Green Photonics at the Prism Awards Ceremony.
  • 03-Jan-12 Translucent is referenced in an article in the current issue of Semiconductor Today Magazine.
  • 20-Dec-11 Translucent's Michael Lebby gave an invited talk at Honet 2011.
  • 30-Nov-11 Article about Translucent's technology is published in Oct/Nov issue of Semiconductor Today.
  • 12-Oct-11 Translucent visits PIDA in Taiwan.